Institute of Chemistry has made a series of progresses in the controlled preparation and performance of graphene

The controllable synthesis of high-quality graphene is essential for both fundamental research and practical applications, making it a critical scientific challenge that demands in-depth exploration. This field involves precise control over parameters such as size, shape, grain boundaries, crystallinity, and doping to achieve tailored electrical properties. Supported by the Chinese Academy of Sciences, the Ministry of Science and Technology, and the National Natural Science Foundation of China, researchers from the Organic Solids Laboratory at the Institute of Chemistry have made significant progress in controllable graphene preparation and performance optimization. Their findings have been published in top-tier journals like *Advanced Materials*, *NPG Asia Materials*, *J. Am. Chem. Soc.*, and *Nature Communications*. One of the key challenges in graphene technology is the direct growth of graphene on dielectric layers rather than transferring it from metal substrates. Chemical vapor deposition (CVD) is widely used due to its ability to produce high-quality, large-area graphene. However, the transfer process often leads to defects, wrinkles, and contamination. Growing graphene directly on dielectrics offers compatibility with existing silicon-based electronics and simplifies device fabrication. In previous studies, the lab developed an oxygen-assisted method to grow high-quality graphene directly on silicon dioxide, achieving controlled nucleation and crystal size. Later, they successfully grew large-area monocrystalline graphene on silicon nitride, demonstrating exceptional electrical performance with electron mobility reaching 1510 cm²/V·s in air and 1518 cm²/V·s in nitrogen—double that of conventional methods. Another breakthrough involved the morphology regulation of single-crystal graphene. By controlling the CVD process, researchers created hexagonal graphene structures with sixfold symmetry, resembling snowflakes in nature. These structures revealed a universal growth mechanism governed by kinetic control, offering insights into the formation of two-dimensional atomic crystals. Building on this, the team explored graphene etching behavior. They discovered that adjusting gas ratios during etching could lead to complex fractal patterns, challenging traditional notions of anisotropic etching. This work was featured in *J. Am. Chem. Soc.* and highlighted by *Chemistry World* as "carving graphene snowflakes with gases." Additionally, researchers collaborated to create single-walled carbon nanotube/graphene junctions, which exhibited rectifying behavior and superior photodetection performance compared to conventional pn junctions. The results were published in *Nature Communications*. These advancements not only deepen our understanding of non-equilibrium material growth but also open new avenues for scalable, high-quality graphene production. The studies highlight the interplay between order and disorder, simplicity and complexity, and provide valuable insights into both material science and natural phenomena.

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