Ningbo Institute of Materials and other institutions in the interface design of efficient and stable perovskite solar cells

Perovskite solar cells are gaining significant attention due to their low production costs and high photoelectric conversion efficiency, positioning them as a promising candidate for the next generation of photovoltaic technology. The primary focus in this field currently revolves around enhancing the efficiency, stability, and scalability of these devices. A key aspect of achieving this involves optimizing the interface energy level alignment and managing defect densities, especially in the commonly used "nip" architecture. However, the energy level mismatch between the hole transport layer material (like spiro-OMeTAD) and the perovskite, coupled with surface defects introduced during fabrication, often leads to substantial non-radiative recombination losses. Thus, understanding the precise interplay between interface energy levels, defect density, and overall device performance is essential, necessitating innovative approaches to interface engineering. In a recent breakthrough, a team led by Dr. Ye Jichun from the Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, has advanced the field of perovskite solar cell interface optimization. Building upon earlier studies, the team explored the potential of a 2D/3D perovskite heterojunction design. Their research revealed that even a slight interface energy level difference of 0.2 eV could enhance the device's resilience to interface defects by three orders of magnitude. This finding not only quantifies the relationship between interface field passivation and chemical passivation but also underscores the importance of precise energy level alignment in perovskite solar cells. Furthering their exploration, the team discovered that by carefully designing the halogen composition within 2D perovskites, they could precisely control the energy level difference at the interface. This approach not only effectively passivates surface defects in the perovskite but also suppresses ion migration, a critical factor in long-term stability. Leveraging these insights, the researchers successfully fabricated small-area solar cells achieving an efficiency of 25.32%, validated externally at 25.04%. Additionally, they developed large-area modules (29 cm²) with comparable efficiency, demonstrating excellent steady-state operational stability. Impressively, these modules retained 90% of their initial efficiency over 2000 hours of continuous operation at maximum power output. These findings offer valuable theoretical and practical guidance for advancing efficient, stable, and scalable perovskite solar cells. This groundbreaking research was published in *Advanced Materials* under the title *"Visualizing Interfacial Energy Offset and Defects in Efficient 2D/3D Heterojunction Perovskite Solar Cells and Module."* Accompanying the publication are several illustrative figures, including Figure 1, which highlights the quantitative relationship between interface energy differences, defect density, and device performance; Figure 2, showcasing the photovoltaic properties of the 2D/3D perovskite heterojunction design; Figure 3, examining how halogen ratios and types influence device performance; and Figure 4, presenting a high-efficiency and stable perovskite solar cell module based on the 2D/3D heterojunction concept. The visual representations provide compelling evidence of the team’s achievements, further solidifying their contributions to the advancement of perovskite solar cell technology. As the global demand for renewable energy sources continues to grow, innovations like these pave the way toward more sustainable and economically viable solar solutions.

680nm LED

680nm led is a infrared LED(IR LED). Common infrared LEDs are like: 670nm IR LEDLED, 680nm IR LEDLED, 690nm IR LEDled, 700nm IR LEDled, 710nm IR LEDled and so on.


We supply variety of 680nm IR LED(Infrared LED) products. Including Through-hole 680nm LED, SMD 680nm LED and high-power 680nm LED. We can also produce 680nm LED according to your requirement.


For the Through-hole Light Emitting Diode 680nm LED,

We can customize the shape, the lighting angle, the number of emitting source, the flat pin LED and braided LED. Such as: infrared 5mm 680nm LED with 5 degree, infrared 5mm 680nm LED with 20 degree, infrared 5mm 680nm LED with 30 degree, infrared 5mm 680nm LED with 45 degree, infrared 5mm 680nm LED with 60 degree, infrared 5mm 680nm with 90 degree, infrared 5mm 680nm LED with 120 degree. Infrared 3mm 680nm LED with 3 degree, infrared 3mm 680nm LED with 20 degree, infrared 3mm 680nm LED with 30 degree, infrared 3mm 680nm LED with 45 degree, infrared 3mm 680nm LED with 60 degree, infrared 3mm 680nm with 90 degree, infrared 3mm 680nm LED with 120 degree ect.

There are many other shapes or color of lens for your choose. Customized infrared LED are available


For the SMD LED 680nm LED,

We can supply dual-chip infrared LED, three-chip infrared LED, multi-chip infrared LED, high voltage LED, flashing infrared LED and variety of size SMD LED. For instance: 3528 SMD infrared 680nm LED, 2835 SMD infrared 680nm LED, 3014 SMD infrared 680nm LED, 1206 SMD infrared 680nm LED, 3020 SMD infrared 680nm LED.
There are also have many other shapes to choose, like the 5050 SMD infrared LED, the 5730 SMD infrared LED ect. You can choose any one of them for your requirement.

680nm LED, 680nm IR LED, 680nm Infrared LED, 680nm Diode

Shenzhen Best LED Opto-electronic Co.,Ltd / BESTSMD CO LIMITED(HK) , https://www.bestsmd.com