6 inch silicon carbide single crystal substrate successfully developed
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The researchers measured the size of the 6-inch silicon carbide single crystal substrate (photo taken on December 9).
Chen Xiaolong, a researcher at the Institute of Physics, Chinese Academy of Sciences, displayed a 6-inch silicon carbide single crystal substrate (photographed on December 17th) in front of a chart demonstrating the physical principles of silicon carbide. Xinhua News Agency reporter Jin Liwang
Recently, a team of researchers from the Advanced Materials and Structure Analysis Laboratory of the National Laboratory for Condensed Matter Physics of the Chinese Academy of Sciences cooperated with Beijing Tianke Heda Blu-ray Semiconductor Co., Ltd. to successfully develop a 6-inch silicon carbide (SiC) sheet. Crystal substrate.
It is reported that silicon carbide is a third-generation semiconductor material and is an ideal substrate for manufacturing high-brightness LEDs, power electronic power devices, and radio frequency microwave devices.
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